SSD65N10S-C mosfet equivalent, n-ch enhancement mode power mosfet.
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available
MARKING
65N10S
Date Code
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Lea.
SSD65N10S-C meets the RoHS and Green Product requirement with full function reliability approved.
FEATURES
Advanced hi.
SSD65N10S-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provides excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
SSD65N10S-C meets the RoHS and Green Product requirem.
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