SSD40P04J datasheet, mosfet equivalent, SeCoS

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Features and benefits

High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good he.

Application

FEATURES High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stabili.

Description

SSD40P04J uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well suited for high current load applications. FEATURES High density cell design for ultra low RDS(ON) Fully characterized avalan.

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