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SSD30N10J - N-Channel MOSFET

General Description

SSD30N10J is designed to stand high energy in the avalanche mode and switch efficiently.

It also offers a drain-to-source diode fast recovery time.

It is designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.

Key Features

  • High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation A B C D GE.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSD30N10J 30A, 100V, RDS(ON) 31mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION SSD30N10J is designed to stand high energy in the avalanche mode and switch efficiently. It also offers a drain-to-source diode fast recovery time. It is designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. TO-252(D-Pack) FEATURES High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation A B C D GE MARKING CJU30N10 = Date Code PACKAGE INFORMATION Package MPQ TO-252 2.