SSD30N10J mosfet equivalent, n-channel mosfet.
High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good he.
such as power supplies, converters, power motor controls and bridge circuits.
TO-252(D-Pack)
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High density cel.
SSD30N10J is designed to stand high energy in the avalanche mode and switch efficiently. It also offers a drain-to-source diode fast recovery time. It is designed for high voltage, high speed switching applications such as power supplies, converters,.
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