SSD2504
SSD2504 is N-Channel MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION
The SSD2504 provide the designer with the best bination of fast switching. The TO-252 package is universally preferred for all mercial-industrial surface mount applications. The device is suited for charger, industrial and consumer environment. TO-252(D-Pack)
FEATURES
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Low On-resistance Fast Switching Speed Low-voltage drive (4V) Wide SOA (safe operating area) Easily designed drive circuits Easy to parallel
MARKING
Drain
REF.
Gate
Source http://..net/
A B C D E F G H
Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20
REF.
J K M N O P
Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
SYMBOL VDS VGS ID @TC=25℃ ID @TC=100℃ IDM PD @TC=25℃ TJ, TSTG RθJA RθJC
RATINGS 100 ±20 5.0 3.75 20 20 0.16 -55 ~ 150 110 6.25
UNIT V V A A A W W / °C °C °C / W °C / W
Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Thermal Resistance Junction-Ambienta Maximum Thermal Resistance Junction-Case
THERMAL DATA http://.Se Co SGmb H./
Any changes of specification will not be informed individually.
11-May-2010 Rev. A
Page 1 of 4 datasheet pdf
- http://..net/
Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 5.0A, 100V, RDS(ON) 0.22Ω
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
PARAMETER Dran-Source Breakdown Voltage Gate-Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current Static Drain-Source On-Resistance 2 Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance SYMBOL BVDSS VGS(th) gfs IGSS IDSS RDS(ON) Td(on) Tr Td(off) Tf CISS COSS CRSS MIN. 100 1.0 http://..net/
TYP. 4 9.0 9.4...
