SSD10N10J-C mosfet equivalent, n-ch enhancement mode power mosfet.
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline Green Device Available
MARKING
10N10J
Date Code
PACKAGE INFORMATION
.
.
TO-252(D-Pack)
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect d.
The SSD10N10J-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
TO-252(D-Pack)
FEATURES
Advanced high cell dens.
Image gallery
TAGS
Download (Size : 397.37KB)