SPT258N10SV-C Datasheet - SeCoS

SPT258N10SV-C N-Channel Shielded Gate Trench Power MOSFET

SPT258N10SV-C Features

* Shielded Gate Trench Technology

* High Speed Power Smooth Switching

* Enhanced Body diode dv/dt capability

* 100% UIS Tested, 100% Rg Tested

* Super Low Gate Charge

* Green Device Available TOLL-8 MARKING SPT 258N10SV   = Date Code PACKAGE INFORMATION Package MP

Datasheet Details

SPT258N10SV-C

SeCoS

603.37 KB

N-channel shielded gate trench power mosfet.

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