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SMG2342N - N-Channel MosFET

General Description

These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss heat dissipation.

Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printer , PCMCIA cards, cellular and cordless telephones.

Overview

Elektronische Bauelemente SMG2342N 5.2 A, 40 V, RDS(ON) 86 m N-Channel Enhancement Mode Mos.

Key Features

  • Low RDS(on) provides higher efficiency and extends battery life.
  • Low thermal impedance copper leadframe SC-59 saves board Space.
  • Fast switching speed.
  • High performance trench technology.