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SMG2305-C - P-Channel Enhancement MOSFET

General Description

The SMG2305-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications.

Key Features

  • Advanced High Cell Density Trench Technology Super Low Gate Charge.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SMG2305-C -4.2A, -20V, RDS(ON) 53mΩ P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMG2305-C is the highest performance trench P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the small power switching and load switch applications. The SMG2305-C meet the RoHS and Green Product requirement with full function reliability approved. SC-59 A L 3 Top View CB 1 1 2 K E 3 2 FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge MARKING 2305 D F G H J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 3.00 1.20 1.70 0.89 1.40 2.00 Typ. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.