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SGM1K35N20 - N-CHANNEL MOSFET

General Description

The SGM1K35N20 is the highest performance trench dual N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications .

Key Features

  • Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available.

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Datasheet Details

Part number SGM1K35N20
Manufacturer SeCoS
File Size 560.01 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet SGM1K35N20 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SGM1K35 20 1.6A, 200V, RDS(O ) 1.35Ω -Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SGM1K35N20 is the highest performance trench dual N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications . The SGM1K35N20 meet the RoHS and Green Product requirement with full function reliability approved.