SDT3A5N06-C datasheet, mosfet equivalent, SeCoS

Features and benefits

Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 3A5N06 . = Date code PACKAGE INFORMATION Package MPQ DFN2×2-6J 3.

Application

The SDT3A5N06-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced.

Description

The SDT3A5N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The SDT3A5N06-C meet the RoHS and Green Product requ.

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