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SDT3A5N06-C Datasheet, SeCoS

SDT3A5N06-C mosfet equivalent, n-channel enhancement mode power mosfet.

SDT3A5N06-C Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 332.68KB)

SDT3A5N06-C Datasheet

Features and benefits

Advanced high cell density Trench technology Super Low Gate Charge Green Device Available MARKING 3A5N06 . = Date code PACKAGE INFORMATION Package MPQ DFN2×2-6J 3.

Application

The SDT3A5N06-C meet the RoHS and Green Product requirement with full function reliability approved. FEATURES Advanced.

Description

The SDT3A5N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The SDT3A5N06-C meet the RoHS and Green Product requ.

Image gallery

SDT3A5N06-C Page 1 SDT3A5N06-C Page 2 SDT3A5N06-C Page 3

TAGS

SDT3A5N06-C
N-Channel
Enhancement
Mode
Power
MOSFET
SeCoS

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