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Elektronische Bauelemente
SDT3A5 06-C
3.5A, 60V, RDS(O ) 100 mΩ -Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SDT3A5N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The SDT3A5N06-C meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available
MARKING
3A5N06
.
= Date code
PACKAGE INFORMATION
Package
MPQ
DFN2×2-6J
3K
Leader Size 7 inch
DFN2x2-6J
REF.
A B C D E F G
Millimeter Min. Max. 1.924 2.076 1.924 2.076 0.46 0.66
0.65 TYP. 0.20 0.40 0.