SDT3A5N06-C mosfet equivalent, n-channel enhancement mode power mosfet.
Advanced high cell density Trench technology Super Low Gate Charge Green Device Available
MARKING
3A5N06
.
= Date code
PACKAGE INFORMATION
Package
MPQ
DFN2×2-6J
3.
The SDT3A5N06-C meet the RoHS and Green Product requirement with full function reliability approved.
FEATURES
Advanced.
The SDT3A5N06-C is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The SDT3A5N06-C meet the RoHS and Green Product requ.
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