SCP35N03J-C datasheet, mosfet equivalent, SeCoS

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Features and benefits

* High density cell design for ultra low RDS(ON)
* Fully Characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excel.

Application

DFN3x3-8J FEATURES
* High density cell design for ultra low RDS(ON)
* Fully Characterized avalanche voltage an.

Description

SCP35N03J-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications DFN3x3-8J FEATURES
* High density cell design for ultra low RDS(ON)
* Fully Character.

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