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Elektronische Bauelemente
MMDT3906
PNP Silicon Multi-Chip Transistor
* Features
RoHS Compliant Product $VXIIL[RI&VSHFLILHVKDORJHQ OHDGIUHH
Power dissipation. PCM : 0.2 W (Tamp.=25OC)
Collector current ICM : - 0.2 A
Collector -base voltage V(BR) CBO : - 40 V
Operating & storage junction temperature Tj, Tstg : -55OC ~ +150OC
C2 B1 E1
E2 B2 C1
Marking : K3N or A2
SOT-363
.055(1.40) .047(1.20)
.026TYP (0.65TYP)
.021REF (0.525)REF
8o 0o
.096(2.45) .085(2.15)
.053(1.35 .045(1.15
.014(0.35) .006(0.15) .087(2.20) .079(2.00)
.043(1.10) .035(0.90)
.018(0.46) .010(0.26)
.006(0.15) .003(0.08)
.004(0.10) .000(0.00)
.039(1.00) .035(0.