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MMBTA14 - Darlington Amplifier Transistor NPN Silicon

Download the MMBTA14 datasheet PDF. This datasheet also covers the MMBTA13 variant, as both devices belong to the same darlington amplifier transistor npn silicon family and are provided as variant models within a single manufacturer datasheet.

Features

  • C Power dissipation D PCM : 0.3W Tamb=25 Collector current ICM : 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range TJ Tstg: -55 to +150 H K SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 J L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MMBTA13-SeCoS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MMBTA14
Manufacturer SeCoS
File Size 321.96 KB
Description Darlington Amplifier Transistor NPN Silicon
Datasheet download datasheet MMBTA14 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Elektronische Bauelemente MMBTA13 MMBTA14 Darlington Amplifier Transistor NPN Silicon RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 3 1 2 COLLECTOR 3 BASE 1 EMITTER 2 A L 3 BS 12 VG FEATURES C Power dissipation D PCM : 0.3W Tamb=25 Collector current ICM : 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range TJ Tstg: -55 to +150 H K SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 J L 0.890 1.020 S 2.100 2.500 V 0.450 0.
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