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MMBT2907ACR-C - PNP Transistor

Key Features

  • Epitaxial Planar die construction Complementary NPN Type Available MMBT2222ACR-C Ideal for Medium Power Amplification and Switching Qualified to AEC-Q101 Standards for High Reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente MMBT2907ACR-C -600mA, -60V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Epitaxial Planar die construction Complementary NPN Type Available MMBT2222ACR-C Ideal for Medium Power Amplification and Switching Qualified to AEC-Q101 Standards for High Reliability APPLICATION Gate Driving MOSFET and IGBT DC-DC Converters Charging Circuit Power Switches MARKING 2F PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch ORDER INFORMATION Part Number Type MMBT2907ACR-C Lead (Pb)-free and Halogen-free ESD RATING Parameter Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Symbol VESD SOT-23 A L 3 Top View CB 1 1 2 K E D F G H 3 2 J REF.