www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4908
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=0.7A ;IB=0.14A
VBEsat
Base-emitter saturation voltage
IC=0.7A ;IB=0.14A
ICBO Collector cut-off current
VCB=800V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=0.7A ; VCE=4V
COB Output capacitance
IE=0; VCB=10V;f=1MHz
fT Transition frequency
IE=-0.3A ; VCE=12V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=0.7A; IB1=0.1A
IB2=-0.35A
VCC=250V ,RL=357B
MIN TYP. MAX UNIT
800 V
0.5 V
1.2 V
100 µA
100 µA
10 30
40 pF
6 MHz
1.0 µs
5.0 µs
1.0 µs
2
