www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4804
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=0.8A; IB=0.16A
VBEsat
Base-emitter saturation voltage
IC=0.8A; IB=0.16A
ICBO Collector cut-off current
VCB=800V; IE=0
IEBO Emitter cut-off current
VEB=7V; IC=0
hFE DC current gain
IC=0.8A ; VCE=5V
MIN TYP. MAX UNIT
600 V
900 V
7V
0.6 V
1.2 V
0.1 mA
0.1 mA
10
2
Free Datasheet http://www.Datasheet-PDF.com/
