www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4662
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.3A
VBEsat
Base-emitter saturation voltage
IC=1.5A ;IB=0.3A
ICBO Collector cut-off current
VCB=500V; IE=0
IEBO Emitter cut-off current
VEB=10V; IC=0
hFE DC current gain
IC=1.5A ; VCE=4V
COB Output capacitance
IE=0; VCB=10V;f=1MHz
fT Transition frequency
IE=-0.3A ; VCE=12V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=1.5A; IB1=0.15A
IB2=-0.3A
VCC=200V ,RL=133>
MIN TYP. MAX UNIT
400 V
0.5 V
1.3 V
100 µA
100 µA
10 30
30 pF
20 MHz
1.0 µs
2.5 µs
0.5 µs
2
