www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4589
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR )CEO Collector-emitter breakdown voltage IC=10mA; RBE=:
V(BR )EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=8A; IB=1.6 A
VBEsat
Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
hFE DC current gain
IC=8A; IB=1.6 A
VCE=1500V;RBE=0
VEB=5V; IC=0
IC=1A ; VCE=5V
tf Fall time
ICP=7A; IB1=1.4A
MIN TYP. MAX UNIT
800 V
5V
5.0 V
1.5 V
500 µA
100 µA
8 38
0.2 0.5
µs
2
