www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4584
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=3A;IB=0.6 A
VBEsat
Base-emitter saturation voltage
IC=3A;IB=0.6 A
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A;IB=0
IEBO Emitter cut-off current
At rated voltage
ICBO Collector cut-off current
ICEO Collector cut-off current
At rated voltage
hFE-1
DC current gain
IC=3 A ; VCE=5V
hFE-2
DC current gain
IC=1mA ; VCE=5V
fT Transition frequency
IC=0.6A ; VCE=10V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IC=3A;RL=85C
IB1=0.6A; IB2=1.2A
VBB2=4V
MIN TYP. MAX UNIT
1.0 V
1.5 V
800 V
0.1 mA
0.1 mA
8
7
8
MHz
0.5 µs
3.5 µs
0.3 µs
2
Free Datasheet http://www.datasheet-pdf.com/
