www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4581
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=5A; IB=1 A
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1 A
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0
IEBO Emitter cut-off current
At rated voltage
ICBO Collector cut-off current
ICEO Collector cut-off current
At rated voltage
hFE-1
DC current gain
IC=5 A ; VCE=5V
hFE-2
DC current gain
IC=1mA ; VCE=5V
fT Transition frequency
IC=1A ; VCE=10V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IC=5A;RL=30D
IB1=1A; IB2=2A
VBB2=4V
MIN TYP. MAX UNIT
1.0 V
1.5 V
450 V
0.1 mA
0.1 mA
10
5
20
MHz
0.5 µs
2.0 µs
0.2 µs
2
