www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4542
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=7A; IB=1.7A
VBEsat
Base-emitter saturation voltage
IC=7A; IB=1.7A
ICBO Collector cut-off current
IEBO Emitter cut-off current
hFE DC current gain
Cob Collector output capacitance
VCB=1500V; IE=0
VEB=5V; IC=0
IC=1A ; VCE=5V
IE=0 ; VCB=10V,f=1MHz
fT Transition frequency
IE=0.1A ; VCE=10V
Switching times resistive load
ts Storage time
tf Fall time
ICP=7A;IB1=1.4A
IB2=-2.8A; RL=28.5A
MIN TYP. MAX UNIT
600 V
5V
1.5 V
1.0 mA
10 µA
8 15
210 pF
13
MHz
1.8 2.5 µs
0.1 0.2 µs
2
Free Datasheet http://www.datasheet4u.com/
