www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4370
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50mA
VBE Base-emitter on voltage
IC=0.5A;VCE=5V
ICBO Collector cut-off current
VCB=160V; IE=0
IEBO Emitter cut-off current
hFE DC current gain
fT Transition frequency
COB Collector output capacitance
VEB=5V; IC=0
IC=0.1A ; VCE=5V
IC=0.1A ; VCE=10V
f=1MHz;VCB=10V
MIN TYP. MAX UNIT
160 V
1.5 V
1.0 V
1.0 µA
1.0 µA
70 240
100 MHz
25 pF
hFE Classifications
OY
70-140
120-240
2
Free Datasheet http://www.Datasheet4U.com
