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SavantIC

C4237 Datasheet Preview

C4237 Datasheet

SILICON POWER TRANSISTOR

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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4237
DESCRIPTION
·With TO-247 package
·Switching power transistor
·High breakdown voltage
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
ICM Collector current-Peak
IB Base current
IBM Base current-Peak
PD Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
1200
800
7
10
20
4
8
150
150
-55~150
UNIT
V
V
V
A
A
A
A
W
MAX
0.83
UNIT
/W




SavantIC

C4237 Datasheet Preview

C4237 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4237
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1A
ICBO Collector cut-off current
ICEO Collector cut-off current
At rated voltage
IEBO Emitter cut-off current
At rated voltage
hFE-1
DC current gain
IC=5A ; VCE=5V
hFE-2
DC current gain
IC=1mA ; VCE=5V
fT Transition frequency
IC=1A ; VCE=10V
Switching times resistive load
ton Turn-on time
ts Storage time
tf Fall time
IC=5A
IB1=1A; IB2=2A
VBB2=4V ,RL=50B
MIN TYP. MAX UNIT
800 V
1.0 V
1.5 V
0.1 mA
0.1 mA
8
5
8 MHz
0.5 µs
3.5 µs
0.3 µs
2


Part Number C4237
Description SILICON POWER TRANSISTOR
Maker SavantIC
PDF Download

C4237 Datasheet PDF






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