Description
With TO-247 package - Switching power transistor - High breakdown voltage PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and symbol SYMBOL PARAMETER VCBO VCEO VEBO IC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) ICM Collector current-Peak IB Base current IBM Base current-Peak PD Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 SYMBOL PARAMETER Rth j-C VALUE 1200 800 7 10 20 4 8 150 150 -55~150 UNIT V V V A A A A W MAX 0.83 UNIT /W .datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors Product Specification 2SC4237 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; IB=0 VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A VBEsat Base-emitter saturation voltage IC=5A ;IB=1A ICBO Collector cut-off current ICEO Collector cut-off current At rated voltage IEBO Emitter cut-off current At rated voltage hFE-1 DC current gain IC=5A ; VCE=5V hFE-2 DC current gain IC=1mA ; VCE=5V fT Transition frequency IC=1A ; VCE=10V Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=5A IB1=1A; IB2=2A VBB2=4V ,RL=50B MIN TYP. MAX UNIT 800 V 1.0 V 1.5 V 0.1 mA 0.1 mA 8 5 8 MHz 0.5 µs 3.5 µs 0.3 µs 2 .datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors PACKAGE OUTLINE Product Specification 2SC4237 Fig.2 Outline dimensions 3.
