Datasheet Details
| Part number | C4235 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 152.53 KB |
| Description | 2SC4235 |
| Datasheet |
 C4235 Datasheet
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| Part number | C4235 |
|---|---|
| Manufacturer | SavantIC |
| File Size | 152.53 KB |
| Description | 2SC4235 |
| Datasheet |
C4235 Datasheet
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·With TO-247 package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-247) and symbol Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO IC Emitter-base voltage Collector current (DC) ICM Collector current-Peak IB Base current IBM Base current-Peak PD Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-C Thermal resistance junction to case VALUE 1200 800 7 3 6 1 2 80 150 -55~150 UNIT V V V A A A A W MAX 1.56 UNIT /W www.datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors Product Specification 2SC4235 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A;
IB=0 VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.3A VBEsat Base-emitter saturation voltage IC=1.5A ;IB=0.3A ICBO Collector cut-off current ICEO Collector cut-off current At rated voltage IEBO Emitter cut-off current At rated voltage hFE-1 DC current gain IC=1.5A ;
VCE=5V hFE-2 DC current gain IC=1mA ;
www.datSasaheveat4nu.tcIoCm Semiconductor Silicon NPN Power Transistors Product.
| Part Number | Description |
|---|---|
| C4231 | 2SC4231 |
| C4233 | 2SC4233 |
| C4234 | Silicon NPN Power Transistors |
| C4237 | SILICON POWER TRANSISTOR |
| C4278 | Silicon NPN Power Transistor |