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SavantIC

C4235 Datasheet Preview

C4235 Datasheet

2SC4235

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www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4235
DESCRIPTION
·With TO-247 package
·Switching power transistor
·High breakdown voltage
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Fig.1 simplified outline (TO-247) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current (DC)
ICM Collector current-Peak
IB Base current
IBM Base current-Peak
PD Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction to case
VALUE
1200
800
7
3
6
1
2
80
150
-55~150
UNIT
V
V
V
A
A
A
A
W
MAX
1.56
UNIT
/W




SavantIC

C4235 Datasheet Preview

C4235 Datasheet

2SC4235

No Preview Available !

www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4235
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0
VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.3A
VBEsat
Base-emitter saturation voltage
IC=1.5A ;IB=0.3A
ICBO Collector cut-off current
ICEO Collector cut-off current
At rated voltage
IEBO Emitter cut-off current
At rated voltage
hFE-1
DC current gain
IC=1.5A ; VCE=5V
hFE-2
DC current gain
IC=1mA ; VCE=5V
fT Transition frequency
IC=0.3A ; VCE=10V
Switching times resistive load
ton Turn-on time
ts Storage time
tf Fall time
IC=1.5A
IB1=0.3A; IB2=0.6A
VBB2=4V ,RL=170C
MIN TYP. MAX UNIT
800 V
1.0 V
1.5 V
0.1 mA
0.1 mA
8
7
8 MHz
0.5 µs
3.5 µs
0.3 µs
2


Part Number C4235
Description 2SC4235
Maker SavantIC
PDF Download

C4235 Datasheet PDF






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