www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4235
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0
VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.3A
VBEsat
Base-emitter saturation voltage
IC=1.5A ;IB=0.3A
ICBO Collector cut-off current
ICEO Collector cut-off current
At rated voltage
IEBO Emitter cut-off current
At rated voltage
hFE-1
DC current gain
IC=1.5A ; VCE=5V
hFE-2
DC current gain
IC=1mA ; VCE=5V
fT Transition frequency
IC=0.3A ; VCE=10V
Switching times resistive load
ton Turn-on time
ts Storage time
tf Fall time
IC=1.5A
IB1=0.3A; IB2=0.6A
VBB2=4V ,RL=170C
MIN TYP. MAX UNIT
800 V
1.0 V
1.5 V
0.1 mA
0.1 mA
8
7
8 MHz
0.5 µs
3.5 µs
0.3 µs
2
