www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4234
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A;IB=0
VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A
VBEsat
Base-emitter saturation voltage
IC=1.5A; IB=0.3A
ICBO Collector cut-off current
ICEO Collector cut-off current
At rated volatge
IEBO Emitter cut-off current
At rated volatge
hFE-1
DC current gain
IC=1.5A; VCE=5V
hFE-2
DC current gain
IC=1mA ; VCE=5V
fT Transition frequency
IC=0.3A ; VCE=10V
ton Turn-on time
ts Storage time
tf Fall time
IC=1.5A;IB1=0.3A
IB2=0.6A ,RL=170C
VBB2=4V
MIN TYP. MAX UNIT
800 V
1.0 V
1.5 V
0.1 mA
0.1 mA
8
7
8 MHz
0.5 µs
3.5 µs
0.3 µs
2
Free Datasheet http://www.datasheet-pdf.com/
