www.datSasaheveat4nu.tcIoCm Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC4140
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=10A; IB=2A
VBEsat
Base-emitter saturation voltage
IC=10A; IB=2A
ICBO Collector cut-off current
VCB=500V ;IE=0
IEBO Emitter cut-off current
VEB=10V; IC=0
hFE DC current gain
IC=10A ; VCE=4V
fT Transition frequency
IE=-2A ; VCE=12V
COB Collector output capacitance
f=1MHz ; VCB=10V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IC=10A;IB1=1A;
IB2=-2A;RL=20@
VCC=200V
MIN TYP. MAX UNIT
400 V
0.5 V
1.3 V
100 µA
100 µA
10 30
10 MHz
165 pF
1.0 µs
3.0 µs
0.5 µs
2
