SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.6A
ICBO Collector cut-off current
IEBO Emitter cut-off current
hFE DC current gain
fT Transition frequency
VCB=500V ;IE=0
VEB=10V; IC=0
IC=3A ; VCE=4V
IC=0.5A ; VCE=12V
COB Output capacitance
f=1MHz ; VCB=10V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
VCC=200V; IC=3A
IB1=0.3A;IB2=-0.6A;
RL=66.7?
Product Specification
2SC3832
MIN TYP. MAX UNIT
400 V
0.5 V
1.3 V
100 µA
100 µA
10 30
10 MHz
50 pF
1.0 µs
3.0 µs
0.5 µs
2
