C1448 Overview
·With TO-220 package ·High collector-emitter breakdown voltage : Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=30mA; IB=50m A VCB=150V;IE=0 VEB=5V;.