SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=0.5A; IB=50m A
ICBO Collector cut-off current
VCB=150V;IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=0.5A ; VCE=10V
fT Transition frequency
IC=0.5A ; VCE=10V
Product Specification
2SC1448
MIN TYP. MAX UNIT
150 V
5V
1.5 V
20 µA
20 µA
40 140
5 MHz
2
Free Datasheet http://www.datasheet4u.com/
