SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=50mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A
VBE sat Base-emitter saturation voltage
IC=1A; IB=0.1A
ICBO Collector cut-off current
VCB=110V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=0.4A ; VCE=2V
fT Transition frequency
IC=0.4A ; VCE=10V
Product Specification
2SC1431
MIN TYP. MAX UNIT
110 V
5V
1.0 V
1.2 V
10 µA
10 µA
50 240
30 MHz
2
