SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA; IB=0
V(BR)CBO Collector-base breakdown voltage
IC=50µA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=50µA; IB=0
VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.15A
ICBO Collector cut-off current
VCB=25V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=0.5A ; VCE=2V
fT Transition frequency
IC=0.5A ; VCE=5V
Product Specification
2SC1368
MIN TYP. MAX UNIT
25 V
25 V
5V
0.8 V
1.0 µA
1.0 µA
60 320
180 MHz
2
