SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC1316
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=1A ;IB=0.2A
VBEsat
Base-emitter saturation voltage
IC=1A ;IB=0.2A
ICBO Collector cut-off current
VCB=750V;IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=2A ; VCE=3V
fT Transition frequency
IC=0.5A ; VCE=10V
750 V
5V
3.0 V
1.2 V
100 µA
100 µA
4 14
8.5 MHz
2
