Datasheet4U Logo Datasheet4U.com

BU2727AW Datasheet SILICON POWER TRANSISTOR

Manufacturer: SavantIC

Datasheet Details

Part number BU2727AW
Manufacturer SavantIC
File Size 143.82 KB
Description SILICON POWER TRANSISTOR
Datasheet download datasheet BU2727AW Datasheet

General Description

·With TO-247 package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Base current (DC) Base current -peak Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 1700 825 7.5 12 30 12 25 125 150 -65~150 UNIT V V V A A A A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN www.datasheet4u.com BU2727AW SYMBOL TYP.

MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH 825 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7.5 13.5 V VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.91A 1.0 V VBEsat Base-emitter saturation voltage IC=5A;IB=0.91A VCE=BVCES;

VBE=0 Tj=125 VEB=7.5V;

Overview

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2727AW www.datasheet4u.