BU2527DF Description
IC=0 110 1.1 1.0 2.0 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=1A ; VCE=5V 11 hFE-2 DC current gain IC=8A ; VCE=5V 5 10 CC Collector capacitance IE=0.
| Part number | BU2527DF |
|---|---|
| Download | BU2527DF Datasheet (PDF) |
| File Size | 146.84 KB |
| Manufacturer | SavantIC |
| Description | SILICON POWER TRANSISTOR |
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| Manufacturer | Part Number | Description |
|---|---|---|
NXP Semiconductors |
BU2527DF | Silicon Diffused Power Transistor |
Inchange Semiconductor |
BU2527DF | NPN Transistor |
NXP Semiconductors |
BU2527DX | Silicon Diffused Power Transistor |
Inchange Semiconductor |
BU2527DX | NPN Transistor |
Philips Semiconductors |
BU2527A | Silicon Diffused Power Transistor |
IC=0 110 1.1 1.0 2.0 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE-1 DC current gain IC=1A ; VCE=5V 11 hFE-2 DC current gain IC=8A ; VCE=5V 5 10 CC Collector capacitance IE=0.