BD535 Datasheet | SavantIC

DESCRIPTION - With TO-220C package - plement to type BD534/536/538 - Low saturation voltage APPLICATIONS - For medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER BD533 VCBO Collector-base voltage BD535 BD537 BD533 VCEO Collector-emitter voltage BD535 BD537 VEBO IC IE IB PC Tj Tstg Emitter-base voltage Collector current Emitter current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 45 60 80 45 60 80 5 8 8 1 50 150 -65~150 V A A A W V V UNIT Savant IC Semiconductor Product Specification Silicon NPN Power Transistors BD533/535/537 CHARACTERISTICS .. Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage BD533 CONDITIONS IC=2 A;IB=0.2 A IC=6 A;IB=0.6 A IC=2A ; VCE=2V VCB=45V; IE=0 VCB=60V; IE=0 VCB=80V; IE=0 VCE=45V; VBE=0 VCE=60V; VBE=0 VCE=80V; VBE=0 VEB=5V; IC=0 BD533/535 20 IC=10m A ; VCE=5V BD537 15 IC=0.5A ; VCE=2V Group: J IC=2A ; VCE=2V Group: K Group: J IC=3A ; VCE=2V Group: K IC=0.5A ; VCE=1V 20 3 12 MHz 40 15 100 40 30 75 1 m A 0.1 m A 0.1 m A 0.8 1.5 MIN TYP. MAX 0.8 UNIT V V V SYMBOL VCEsat-1 VCEsat-2 VBE ICBO Collector cut-off current BD535 BD537 BD533 ICES Collector cut-off current BD535 BD537 IEBO Emitter cut-off current h FE-1 DC current gain h FE-2 DC current gain DC current gain (All device) h FE-3 h FE-4 DC current gain (All device) Transition frequency f T Savant IC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE .. BD533/535/537 Fig.2 Outline dimensions (unindicated tolerance:±0.10...