B1272 Overview
Key Specifications
Description
With TO-126 package - DARLINGTON - High DC current gain APPLICATIONS - For low frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter -base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -7 -2 10 150 -55~150 UNIT V V V A W Free Datasheet SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1272 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-10mA;IB=0 IC=-1mA; IE=0 IE=-5mA;IC=0 IC=-2A; IB=-2mA IC=-2A; IB=-2mA VCB=100V; IE=0 VCE=100V; IB=0 VEB=-7V; IC=0 IC=-1A ; VCE=-2V 1000 MIN -100 -100 -7 -2.0 -2.5 -0.1 -0.5 -5.0 10000 TYP. MAX UNIT V V V V V mA mA mA SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO ICEO IEBO hFE 2 Free Datasheet SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1272 Fig.2 Outline dimensions 3 Free Datasheet.
