SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SB1272
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-5mA;IC=0
VCEsat Collector-emitter saturation voltage IC=-2A; IB=-2mA
VBEsat
Base-emitter saturation voltage
IC=-2A; IB=-2mA
ICBO Collector cut-off current
VCB=100V; IE=0
ICEO Collector cut-off current
VCE=100V; IB=0
IEBO Emitter cut-off current
VEB=-7V; IC=0
hFE DC current gain
IC=-1A ; VCE=-2V
MIN TYP. MAX UNIT
-100
V
-100
V
-7 V
-2.0 V
-2.5 V
-0.1 mA
-0.5 mA
-5.0 mA
1000
10000
2
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