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SavantIC

2SD2599 Datasheet Preview

2SD2599 Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2599
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mP(H)IS package
·High voltage;high speed
·Low saturation voltage
·Bult-in damper diode
APPLICATIONS
·Horizontal deflection output for color TV
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
ICM Collector current-peak
IB Base current
PC Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
600
5
3.5
7
1
40
150
-55~150
UNIT
V
V
V
A
A
A
W




SavantIC

2SD2599 Datasheet Preview

2SD2599 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2599
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IC=300mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=3A; IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=3A; IB=0.8A
ICBO Collector cut-off current
VCB=1500V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=0.5A ; VCE=5V
VF Diode forward voltage
IF=3.5A
Cob Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
fT Transition frequency
IC=0.1A ; VCE=10V
Switching times :
ts Storage time
tf Fall time
ICP=3A;IB1=0.8A
fH =15.75kHz
MIN TYP. MAX UNIT
5V
58V
0.9 1.5
V
1 mA
66 200 mA
8 25
1.5 2.0
V
55 pF
3 MHz
7.5 10 µs
0.5 1.0 µs
2


Part Number 2SD2599
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 4 Pages
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