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2SD1136 - SILICON POWER TRANSISTOR

Description

With TO-220C package High collector-base breakdown voltage : VCBO=200V(min) APPLICATIONS For power switching and TV vertical deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VC

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Datasheet Details

Part number 2SD1136
Manufacturer SavantIC
File Size 120.06 KB
Description SILICON POWER TRANSISTOR
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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1136 www.datasheet4u.com DESCRIPTION ·With TO-220C package ·High collector-base breakdown voltage : VCBO=200V(min) APPLICATIONS ·For power switching and TV vertical deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -45~150 Open emitter Open base Open collector CONDITIONS VALUE 200 80 5 4 5 1.
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