2SC4552 Datasheet | SavantIC

DESCRIPTION - With TO-220F package - High h FE and low VCE(sat) APPLICATIONS - For high-speed switching - For use in drivers such as DC-DC converters and actuators. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PT Total power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 100 60 7 15 30 7.5 30 W UNIT V V V A A A .. Savant IC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Collector capacitance Transition frequency CONDITIONS IC=8A; IB=0.8A;L=1m H IC=8A ; IB=0.4A IC=12A ; IB=0.6A IC=8A ; IB=0.4A IC=12A ; IB=0.6A VCB=60V;IE=0 VCB=60V;RBE=50>;Ta=125°C VCB=60V; VBE=-1.5V VCB=60V; VBE=-1.5V;Ta=125°C VEB=5V;IC=0 IC=1.5A ; VCE=2V IC=3.0A ; VCE=2V IC=8.0A ; VCE=2V VCB=10V;IE=0;f=1.0MHz IC=1.5A ; VCE=10V 100 100 60 180 120 p F MHz 400 MIN 60 0.3 0.5 1.2 1.5 10 1.0 10 1.0 10 TYP. MAX UNIT V V V V V µA m A µA m A µA SYMBOL VCEO(SUS) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 ICBO ICER ICEX1 ICEX2 IEBO h FE-1 h FE-2 h FE-3 Cob f T Switching times ton ts tf Turn-on time Storage time Fall time IC=8.0A; IB1=-IB2=0.4A VCC=50V ,RL=6.3> 0.3 1.5 0.3 µs µs µs h FE-2 Classifications M 100-120 L 150-300 K 200-400 .. Savant IC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE...