2SC2335F transistor equivalent, silicon power transistor.
*Designed for use in high-voltage ,highspeed ,power switching in inductive circuit, particularly suited for 115 and .
*With TO-220F package
*Collector-emitter sustaining voltage VCEO(sus)=400V(Min)
*Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A
*Switching time-tf=1.0µs(Max.)@IC=3.0A APPLICATIONS
*Designed for use in hig.
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