2SC1450
DESCRIPTION
- With TO-66 package
- Wide area of safe operation
- High collector-emitter breakdown voltage :VCEO=150V(min)
- plement to type 2SA766 APPLICATIONS
- For power amplifier and vertical output applications.
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=80 CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 0.4 20 150 -65~200 UNIT V V V A W
Savant IC Semiconductor
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain...
