2SB676 transistor equivalent, silicon power transistor.
*For switching applications
*Hammer drive, pulse motor drive applications
*Power amplifier applications
PINN.
*With TO-220C package
*High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A (Min.)
*DARLINGTON APPLICATIONS
*For switching applications
*Hammer drive, pulse motor drive applications
*Power amplifier applications
PINNING PIN 1 2 3 .
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