2SB1411
DESCRIPTION
- With TO-220F package
- DARLINGTON
- High DC current gain
- Low collector saturation voltage APPLICATIONS
- Switching applications
- Hammer drive ,pulse motor drive applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -7 -2 -3 -0.5 20 UNIT V V V A A A W
Tj Tstg
Junction temperature Storage temperature
150 -55~150
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain...
