2SA771 Overview
Description
With TO-220 package - Complement to type 2SC1985/1986 - Low collector saturation voltage APPLICATIONS - For general and industrial purpose applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol SYMBOL PARAMETER 2SA770 VCBO Collector-base voltage 2SA771 2SA770 VCEO Collector-emitter voltage 2SA771 VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -80 -6 -6 -3 40 150 -55~150 V A A W Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SA770 IC=-25mA ,IB=0 2SA771 IC=-3A; IB=-0.3A VCB=-60V; IE=0 CONDITIONS 2SA770 2SA771 SYMBOL MIN -60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -80 -1.0 V VCEsat Collector-emitter saturation voltage 2SA770 2SA771 ICBO Collector cut-off current -1.0 VCB=-80V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-4V IC=-0.5A ; VCE=-12V 40 10 -1.0 mA IEBO hFE fT Emitter cut-off current DC current gain Transition frequency mA MHz Switching times tr tstg tf Rise time Storage time Fall time IC=-3A ; VCC=-9V IB1=-IB2=-0.4A;RL=3C 0.9 1.0 0.1 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA770 2SA771 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3.
