SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SA1111 2SA1112
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
2SA1111
2SA1112
IC=-0.1mA ,IB=0
-150
-180
V
V(BR)EBO Emitter-base breakdown voltage
IE=-10µA ,IC=0
-5
V
VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
-0.5 -2.0
V
VBEsat
Base-emitter saturation voltage
IC=-0.5A; IB=-50mA
-1.0 -2.0
V
ICBO Collector cut-off current
VCB=-120V; IE=0
-1 µA
IEBO Emitter cut-off current
VEB=-4V; IC=0
-1 µA
hFE-1
DC current gain
IC=-150mA ; VCE=-10V
65
330
hFE-2
DC current gain
IC=-500mA ; VCE=-5V
50
COB Output capacitance
IE=0 ; VCB=-10V;f=1MHz
30 pF
fT Transition frequency
IC=50mA ; VCE=-10V
200 MHz
hFE-1 Classifications
PQ
R
S
65-110 90-155 130-220 185-330
2
