2SA1110 Datasheet | SavantIC

Savant IC Semiconductor .. Product Specification Silicon PNP Power Transistors DESCRIPTION - With TO-126 package - plement to type 2SC2590 - Excellent current IC characteristics of forward current transfer ratio h FE vs. collector - High transition frequency f T - Optimum for the driver stage of a 40w to 60w output amplifier APPLICATIONS - For low-frequency power amplification PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute Maximun Ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -0.5 -1.0 1.2- 150 -55~150 UNIT V V V A A W Note) - : Without heat sink Savant IC Semiconductor .. Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-100µA;IB=0 IE=-10µA ;IC=0 IC=-0.3A ;IB=-30m A IC=-0.3A ;IB=-30m A IC=-150m A ; VCE=-10V IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-50m A ; VCB=-10V, 65 50 MIN -120 -5 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat h FE-1 h FE-2 COB f T TYP. UNIT V V -1.0 -1.2 330 100 30 200 V V p F MHz h FE-1 Classifications P 65-110 Q 90-155 R 130-220 S 185-330 Savant IC Semiconductor .. Product...