Description
With TO-66 package - Low collector saturation voltage - Excellent safe operating area - plement to type 2N6372/6373/6374 APPLICATIONS - Designed for driver circuits,switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5954 2N5955 2N5956 Fig.1 simplified outline (TO-66) and symbol SYMBOL PARAMETER 2N5954 VCBO Collector-base voltage 2N5955 2N5956 2N5954 VCEO Collector-emitter voltage 2N5955 2N5956 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -90 -70 -50 -80 -60 -40 -5 -6 -2 40 150 -65~200 V A A W V V UNIT SYMBOL Rth j-c PARAMETER SavantIC Semiconductor. Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5954 VCEO(SUS) Collector-emitter sustaining voltage 2N5955 2N5956 2N5954 VCEsat Collector-emitter saturation voltage 2N5955 2N5956 2N5954 VBE-1 Base-emitter on voltage 2N5955 2N5956 VBE-2 Base-emitter on voltage 2N5954 ICEO Collector cut-off current 2N5955 2N5956 ICEV IEBO Collector cut-off current(RBE=100@) Emitter cut-off current 2N5954 hFE-1 DC current gain 2N5955 2N5956 hFE-2 fT DC current gain Transition frequency IC=-2A; IB=-0.2A IC=-2.5A; IB=-0.25A IC=-3A; IB=-0.3A IC=-2A ; VCE=-4V IC=-2.5A ; VCE=-4V IC=-3A ; VCE=-4V IC=-6A ; VCE=-4V VCE=-65V; IB=0 VCE=-45V; IB=0 VCE=-25V; IB=0 IC=-0.1A ;IB=0 SYMBOL 2N5954 2N5955 2N5956 CONDITIONS MIN -80 -60 -40 TYP.
