2N5737
DESCRIPTION
- With TO-3 package
- Low collector saturation voltage APPLICATIONS
- For general- purpose switching and power amplifier applications.
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO PARAMETER 2N5737 Collector-base voltage 2N5738 2N5737 VCEO VEBO IC ICM IB PC Tj Tstg Collector-emitter voltage 2N5738 Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=100 Open collector Open base -100 -5 -10 -20 -4 50 150 -65~200 V A A A W Open emitter -100 -60 V CONDITIONS VALUE -60 V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5737 VCEO(SUS) Collector-emitter sustaining voltage 2N5738 VCEsat-1 VCEsat-2...
