Datasheet4U Logo Datasheet4U.com

2N5616 Datasheet (2N5614 - 2N5620) Silicon NPN Power Transistors

Manufacturer: SavantIC

Overview: SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N5614 2N5616 2N5618.

Download the 2N5616 datasheet PDF. This datasheet also includes the 2N5614 variant, as both parts are published together in a single manufacturer document.

Datasheet Details

Part number 2N5616
Manufacturer SavantIC
File Size 139.18 KB
Description (2N5614 - 2N5620) Silicon NPN Power Transistors
Download 2N5616 Download (PDF)

General Description

·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ;

and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5614 VCBO Collector-base voltage 2N5616/5618 2N5620 2N5614 VCEO Collector-emitter voltage 2N5616/5618 2N5620 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 80 100 120 60 80 100 5 5 50 150 -65~150 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.5 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5614 VCEO(SUS) Collector-emitter sustaining voltage 2N5616/5618 2N5620 VCEsat VBE ICBO ICEO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N5614/5618 hFE DC current gain 2N5616/5620 2N5614/5618 fT Transition frequency 2N5616/5620 2N5614 2N5616 2N5618 2N5620 SYMBOL CONDITIONS MIN 60 TYP.

MAX UNIT IC=50mA ;IB=0 80 100 V IC=1A;