2N4910
DESCRIPTION
- With TO-66 package
- Low collector saturation voltage
- Excellent safe operating area
- 2N4912 plement to type 2N4900 APPLICATIONS
- Designed for driver circuits,switching and amplifier applications
PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION
2N4910 2N4911 2N4912
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL PARAMETER 2N4910 VCBO Collector-base voltage 2N4911 2N4912 2N4910 VCEO Collector-emitter voltage 2N4911 2N4912 VEBO IC IB PD Tj Tstg Emitter-base voltage Collector current Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 40 60 80 40 60 80 5 1.0 1.0 25 150 -65~200 V A A W V V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 7.0 UNIT /W
Savant IC Semiconductor
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N4910 VCEO(SUS)...
