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C4204 - 2SC4204

Features

  • Adoption of MBIT process.
  • High DC current gain (hFE=800 to 3200).
  • Large current capacity (IC=0.7A).
  • Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
  • High VEBO (VEBO≥15V). 0.45 0.5 0.6 2.0 0.45 0.44 14.0 5.0 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Te.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN2531A NPN Epitaxial Planar Silicon Transistor 2SC4204 High-hFE, AF Amplifier Applications Applications · AF amplifier, various drivers. Package Dimensions unit:mm 2003B [2SC4204] 5.0 4.0 4.0 Features · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Large current capacity (IC=0.7A). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). 0.45 0.5 0.6 2.0 0.45 0.44 14.0 5.0 1 2 3 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1.3 1.
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