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Sanyo Electric Components Datasheet

C4204 Datasheet

2SC4204

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Ordering number:EN2531A
NPN Epitaxial Planar Silicon Transistor
2SC4204
High-hFE, AF Amplifier Applications
Applications
· AF amplifier, various drivers.
Features
· Adoption of MBIT process.
· High DC current gain (hFE=800 to 3200).
· Large current capacity (IC=0.7A).
· Low collector-to-emitter saturation voltage
(VCE(sat)0.5V).
· High VEBO (VEBO15V).
Package Dimensions
unit:mm
2003B
[2SC4204]
5.0
4.0
4.0
0.45
0.5
0.45 0.44
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
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Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
VCB=20V, IE=0
VEB=10V, IC=0
VCE=5V, IC=50mA
VCE=5V, IC=500mA
VCE=10V, IC=50mA
VCB=10V, f=1MHz
IC=500mA, IB=10mA
IC=500mA, IB=10mA
123
1.3 1.3
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
JEDEC : TO-92
EIAJ : SC-43
Ratings
30
25
15
0.7
1.5
0.6
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ
800 1500
600
270
9
0.15
0.9
max
0.1
0.1
3200
0.50
1.2
Unit
µA
µA
MHz
pF
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D1598HA (KT)/4231, 4217TA, TS No.2531–1/4


Sanyo Electric Components Datasheet

C4204 Datasheet

2SC4204

No Preview Available !

Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
2SC4204
Symbol
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
IC=10µA, IE=0
IC=1mA, RBE=
IE=10µA, IC=0
See specified test circuit.
See specified test circuit.
See specified test circuit.
Switching Time Test Circuit
Ratings
min typ
30
25
15
0.1
0.6
0.06
max
Unit
V
V
V
µs
µs
µs
www.DataSheet4U.com
No.2531–2/4


Part Number C4204
Description 2SC4204
Maker Sanyo Semiconductor Corporation
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C4204 Datasheet PDF






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